Manufacturing method of gate insulating film
The semiconductor device of this invention has a P type well region formed inside a P type semiconductor substrate, on which at least three gate insulating films each having a different thickness are formed. Also, the device has the gate electrode formed extending over the three gate insulating film...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The semiconductor device of this invention has a P type well region formed inside a P type semiconductor substrate, on which at least three gate insulating films each having a different thickness are formed. Also, the device has the gate electrode formed extending over the three gate insulating films. The ion implantation of the impurity for controlling the threshold voltage is performed only under the thinnest gate insulating film of the three gate insulating films. |
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