INTEGRATED IMPEDANCE MATCHING AND STABILITY NETWORK

An integrated circuit for intermediate impedance matching and stabilization of high power devices is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of impedance matching and stability circuits to be placed on the same...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: EMRICK RUDY M, FRANSON STEVEN JAMES, BOSCO BRUCE ALLEN
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:An integrated circuit for intermediate impedance matching and stabilization of high power devices is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of impedance matching and stability circuits to be placed on the same substrate as the active device. Additionally, by using the manifolds of the active to form plates of a capacitor, an impedance matching network of series inductance and shunt capacitor can be compactly fabricated for increasing the output impedance to intermediate levels. The manifolds of the active device are also used to form capacitors to provide stability to high power active devices.