Phosphorus dopant control in low-temperature Si and SiGe epitaxy
A method of manufacturing a semiconductor device comprising the step of epitaxially growing of an n-type doped layer of a semiconductor material using an n-type dopant gas, the growth process being performed at a pressure higher than 2.66x104 Pa.
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method of manufacturing a semiconductor device comprising the step of epitaxially growing of an n-type doped layer of a semiconductor material using an n-type dopant gas, the growth process being performed at a pressure higher than 2.66x104 Pa. |
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