Method for utilizing tungsten barrier in contacts to silicide and structure produced therby

Method for utilizing tungsten barrier in contacts to silicide and structure produced therby

A method of forming a liner (and resultant structure) in a contact includes depositing a first layer of refractory metal, annealing the first layer, and sputter depositing a second layer of refractory metal or a compound or an alloy thereof, over the first layer.

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Bibliographische Detailangaben
Hauptverfasser: MANN RANDY WILLIAM, MURPHY WILLIAM JOSEPH, VANSLETTE DANIEL SCOTT, LANZEROTTI LOUIS D, MILES GLEN LESTER
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of forming a liner (and resultant structure) in a contact includes depositing a first layer of refractory metal, annealing the first layer, and sputter depositing a second layer of refractory metal or a compound or an alloy thereof, over the first layer.