SOI CMOS device with body to gate connection

A method and apparatus are provided for implementing a body contact in a silicon-on-insulator field effect transistor device. A SOI field effect transistor is provided having a body contact having a predefined resistance that provides a higher device threshold voltage in the SOI FET device. A body of the SOI field effect transistor is connected to the gate of the SOI field effect transistor. The body gate connection of the SOI field effect transistor effectively lowers the device threshold voltage due to body bias effect. The SOI field effect transistor with a body connected to the gate of the SOI field effect transistor is used in circuits having stacked devices and DC currents. The SOI field effect transistor with a body connected to the gate of the SOI field effect transistor also is used in analog circuits with device matching requirements and in circuits having a low voltage power supply.