Semiconductor device and method of manufacturing the same

A semiconductor device comprises a first base layer for providing a PT-IGBT or IEGT structure, which includes a buffer layer and a collector layer provided in the buffer layer. A first activation rate, defined by an activated first conductivity type impurity density [cm-2] in the buffer layer due to SR analysis/a first conductivity type impurity density [cm-2] in the buffer layer due to SIMS analysis is given by 25% or more, and a second activation rate, defined by an activated second conductivity type impurity density [cm-2] in the collector layer due to SR analysis/a second conductivity type impurity density [cm-2] in the collector layer duet to SIMS analysis is given by more than 0% and 10% or less.