Microelectronic interconnect material with adhesion promotion layer and fabrication method

A microelectronic semiconductor interconnect structure barrier and method of deposition provide improved conductive barrier material properties for high-performance device interconnects. The barrier includes a refractory metal such as cobalt, cobalt-based alloys, ruthenium or ruthenium-based alloys...

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Hauptverfasser: GOPINATH SANJAY, VELO LINO A, BUBBER RANDHIR S, OMSTEAD THOMAS R, RELJA BORIS, PARANJPE AJIT P, CAMPBELL DAVID R, MOSLEHI MEHRDAD M, LEET DAVID M
Format: Patent
Sprache:eng
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Zusammenfassung:A microelectronic semiconductor interconnect structure barrier and method of deposition provide improved conductive barrier material properties for high-performance device interconnects. The barrier includes a refractory metal such as cobalt, cobalt-based alloys, ruthenium or ruthenium-based alloys for promoting adhesion of copper. The barrier materials can be deposited by chemical-vapor deposition to achieve good step coverage and a relatively conformal thin film with a good nucleation surface for subsequent metallization such as copper metallization. In one embodiment, the barrier suppresses diffusion of copper into other layers of the device, including the inter-metal dielectric, pre-metal dielectric, and transistor structures.