Control of Vmin transient voltage drift by using a PECVD silicon oxynitride film at the protective overcoat level

Control of Vmin transient voltage drift by using a PECVD silicon oxynitride film at the protective overcoat level

A method for fabricating a non-FLASH integrated circuit that minimizes Vmin shift. A protective overcoat (134) is deposited to protect and encapsulate the top metal interconnect layer (118). The protective overcoat (134) comprises silicon oxynitride. The protective overcoat (134) is patterned and et...

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Bibliographische Detailangaben
Hauptverfasser: BRUGLER MERCER L, MICKLER EDWARD L, ZUHOSKI STEVEN P, GROSS CAMERON
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for fabricating a non-FLASH integrated circuit that minimizes Vmin shift. A protective overcoat (134) is deposited to protect and encapsulate the top metal interconnect layer (118). The protective overcoat (134) comprises silicon oxynitride. The protective overcoat (134) is patterned and etched to form bondpad windows either before or after depositing the final metal interconnect layer (136).