METHODS FOR REMOVING SILICON-OXY-NITRIDE LAYER AND WAFER SURFACE CLEANING

METHODS FOR REMOVING SILICON-OXY-NITRIDE LAYER AND WAFER SURFACE CLEANING

Methods for removing a silicon-oxy-nitride layer and wafer surface cleaning are disclosed. The method for removing a silicon-oxy-nitride layer utilizes a solution of ethylene glycol and hydrogen fluoride to completely remove the silicon-oxy-nitride layer from a substrate. Moreover, the method for wa...

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Bibliographische Detailangaben
1. Verfasser: TSAI MING-SHENG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Methods for removing a silicon-oxy-nitride layer and wafer surface cleaning are disclosed. The method for removing a silicon-oxy-nitride layer utilizes a solution of ethylene glycol and hydrogen fluoride to completely remove the silicon-oxy-nitride layer from a substrate. Moreover, the method for wafer surface cleaning also uses a solution of ethylene glycol and hydrogen fluoride to remove chemical oxide or native oxide from wafer surfaces and an ethylene glycol solvent to rinse the wafer surfaces.