Method of reducing wafer stress by laser ablation of streets

A wafer is diced by non-abrasively forming a groove along at least one dicing channel without removing any materials as hard as diamond; optionally thinning the wafer by backside grinding and cutting through the wafer by sawing along the groove.

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Bibliographische Detailangaben
Hauptverfasser:	BROUILLETTE DONALD W, DOSTIE ROBERT D, KLINGER-PARK PETRA U
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	A wafer is diced by non-abrasively forming a groove along at least one dicing channel without removing any materials as hard as diamond; optionally thinning the wafer by backside grinding and cutting through the wafer by sawing along the groove.