LATERAL POLYSILICON PIN DIODE AND METHOD FOR SO FABRICATING

The invention provides a PIN diode having a laterally extended I-region. The invention also provides a method of fabricating the inventive PIN diode compatible with modem RF technologies such as silicon-germanium BiCMOS processes.

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Bibliographische Detailangaben
Hauptverfasser:	WALTER KEITH M, JADUS DALE K, GREENBERG DAVID R, SUBBANNA SESHADRI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The invention provides a PIN diode having a laterally extended I-region. The invention also provides a method of fabricating the inventive PIN diode compatible with modem RF technologies such as silicon-germanium BiCMOS processes.