Method for forming gate electrode structure with improved profile and gate electrode structure therefor
A gate electrode, in which the slope of the profile of a gate electrode forming material layer, for example, a refractory metal silicide layer is prevented from being decreased due to thermal expansion by patterning a refractory metal silicide layer after performing a thermal process on a refractory...
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| Sprache: | eng |
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| Zusammenfassung: | A gate electrode, in which the slope of the profile of a gate electrode forming material layer, for example, a refractory metal silicide layer is prevented from being decreased due to thermal expansion by patterning a refractory metal silicide layer after performing a thermal process on a refractory metal silicide layer, thereby having a stable operation characteristic, and a method for manufacturing the same are provided. |
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