Cleaning equipment, cleaning method, semiconductor manufacturing device, and semiconductor device

A cleaning equipment and a cleaning method which prevent occurrence of an after-corrosion phenomenon, which would otherwise arise between Al and Cu; occurrence of defects in an area between Al and Cu, which would otherwise be caused when the time of operation for removing residual chlorine ions or the time of rinsing operation is increased; and occurrence of side etching; and enables attainment of a good etch profile. Ozone water (e.g., oxygen water of high concentration) supplied from an inlet port is introduced into a container from an outlet port by way of an inlet pipe. A robust surface oxide film can be formed on the surface of the wafer (i.e., a substrate to be rinsed). As a result, there can be prevented side etching of Al, which would otherwise be induced by the background art. Further, there can be prevented occurrence of defects in Al in the vicinity of a Cu deposit, which would otherwise be induced by a battery effect. Moreover, occurrence of an after-corrosion phenomenon can also be prevented.