METHOD FOR FABRICATING BIPOLAR TRANSISTORS

METHOD FOR FABRICATING BIPOLAR TRANSISTORS

In accordance with the invention, a bipolar transistor is fabricated by disposing a sacrificial layer over the conventional semiconductor workpiece. The sacrificial layer is patterned into a stripe corresponding to the emitter stripe, and the base contacts are formed in relation to the sacrificial s...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: WYLIE IAN WAKEFIELD
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In accordance with the invention, a bipolar transistor is fabricated by disposing a sacrificial layer over the conventional semiconductor workpiece. The sacrificial layer is patterned into a stripe corresponding to the emitter stripe, and the base contacts are formed in relation to the sacrificial stripe. The stripe is removed, and the base and emitter are formed. In the preferred embodiment, the sacrificial layer is a stack of layers providing etch selectivity.