Method and apparatus for manufacturing semiconductor device

A method and apparatus for manufacturing a semiconductor device can achieve the formation of thin films in a uniform thickness on a substrate. The method and apparatus includes a film-forming process in which film-forming gases 14, 15 are caused to flow over a surface of a substrate 11 substantially...

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Bibliographische Detailangaben
Hauptverfasser:	MATSUYAMA NAOKO, SASAKI SINYA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method and apparatus for manufacturing a semiconductor device can achieve the formation of thin films in a uniform thickness on a substrate. The method and apparatus includes a film-forming process in which film-forming gases 14, 15 are caused to flow over a surface of a substrate 11 substantially in parallel therewith to form thin films on the substrate surface. The film-forming process includes an initial film-forming step for forming a first thin film on the surface of the substrate 11 under a first film-forming conditions and a main film-forming step for forming, on the first thin film acting as a backing layer, a second thin film of a thickness greater than that of the first thin film under a second film-forming condition which differs from the first film-forming condition.