Plasma processing apparatus and plasma processing method
A plasma processing apparatus includes a processing chamber configured to accommodate a substrate, a gas supply configured to supply a processing gas into the processing chamber, a power supply configured to supply power to the processing chamber to generate plasma such that the substrate is process...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A plasma processing apparatus includes a processing chamber configured to accommodate a substrate, a gas supply configured to supply a processing gas into the processing chamber, a power supply configured to supply power to the processing chamber to generate plasma such that the substrate is processed by using the generated plasma, and a control device configured to control the power supply. The control device controls the power supply to perform a process of supplying a first power including a frequency component within a first band having a first bandwidth to the processing chamber when the plasma is generated from the processing gas, and a process of supplying a second power including a frequency component within a second band having a second bandwidth smaller than or equal to the first bandwidth to the processing chamber when the substrate is processed by using the generated plasma. |
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