Doped amorphous silicon carbide

Amorphous silicon carbide may be doped with one or more ions such as vanadium and these ions may radiate light if excited, for example, using optical or electrical pumping. A single photon light source may be formed from a single such ion that is pumped or from a plurality of ions that are pumped if...

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Bibliographische Detailangaben
Hauptverfasser:	Frye, Clint, Voss, Lars, Bond, Tiziana C, Demory, Brandon
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES CHEMISTRY COMPOUNDS THEREOF DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DYES FREQUENCY-CHANGING INORGANIC CHEMISTRY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-LINEAR OPTICS NON-METALLIC ELEMENTS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PAINTS PHYSICS POLISHES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	Amorphous silicon carbide may be doped with one or more ions such as vanadium and these ions may radiate light if excited, for example, using optical or electrical pumping. A single photon light source may be formed from a single such ion that is pumped or from a plurality of ions that are pumped if light from only one ion is collected, e.g., using an aperture or pin hole. Such single photon sources may possibly be use in quantum computing, quantum sensing and/or quantum telecommunications.