Chemically amplified positive resist composition and resist pattern forming process

A chemically amplified positive resist composition is provided comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1). The resist composition exhibits a high resolut...

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Hauptverfasser: Ohashi, Masaki, Masunaga, Keiichi, Watanabe, Satoshi, Kotake, Masaaki
Format: Patent
Sprache:eng
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Zusammenfassung:A chemically amplified positive resist composition is provided comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1). The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER and CDU.