Crop growth information monitoring method and device and method for manufacturing a crop growth information monitoring device

Provided are a crop growth information monitoring method and device and a method for manufacturing a crop growth information monitoring device. The crop growth information monitoring device includes an air exchange channel support, a crop information sensing sensitive layer, an electrode, and a subs...

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Bibliographische Detailangaben
Hauptverfasser:	Li, Denghua, Li, Ganqiong, Chen, Wei, Xu, Shiwei
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	Provided are a crop growth information monitoring method and device and a method for manufacturing a crop growth information monitoring device. The crop growth information monitoring device includes an air exchange channel support, a crop information sensing sensitive layer, an electrode, and a substrate. The air exchange channel support is disposed on the substrate, and in a case where the air exchange channel support is in contact with a monitoring point on a surface of a crop, a gas exchange channel is formed between the crop information sensing sensitive layer and the surface of the crop. The crop information sensing sensitive layer is configured to sense information about molecules emitted through crop transpiration so as to generate a molecule concentration capture signal. The electrode is plated on an upper surface of the substrate, and the crop information sensing sensitive layer is coated on the electrode.