Silicon carbide semiconductor device, semiconductor package, and method of inspecting silicon carbide semiconductor device

A portion of a source pad is exposed in an opening of a passivation film. In the exposed portion of the source pad, a wiring region in which a package wiring member is to be bonded and a probe region that is a region different from the wiring region are provided. The probe region has a probe mark of...

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Hauptverfasser:	Utsumi, Makoto, Miyazato, Masaki
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
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creator	Utsumi, Makoto Miyazato, Masaki
description	A portion of a source pad is exposed in an opening of a passivation film. In the exposed portion of the source pad, a wiring region in which a package wiring member is to be bonded and a probe region that is a region different from the wiring region are provided. The probe region has a probe mark of a probe for an energization inspection. An area of the probe mark that overlaps the wiring region is at most 30% of an entire area of the wiring region in a plan view of the silicon carbide semiconductor device.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
title	Silicon carbide semiconductor device, semiconductor package, and method of inspecting silicon carbide semiconductor device
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