Silicon carbide semiconductor device, semiconductor package, and method of inspecting silicon carbide semiconductor device

Silicon carbide semiconductor device, semiconductor package, and method of inspecting silicon carbide semiconductor device

A portion of a source pad is exposed in an opening of a passivation film. In the exposed portion of the source pad, a wiring region in which a package wiring member is to be bonded and a probe region that is a region different from the wiring region are provided. The probe region has a probe mark of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Utsumi, Makoto, Miyazato, Masaki
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Beschreibung
Zusammenfassung:A portion of a source pad is exposed in an opening of a passivation film. In the exposed portion of the source pad, a wiring region in which a package wiring member is to be bonded and a probe region that is a region different from the wiring region are provided. The probe region has a probe mark of a probe for an energization inspection. An area of the probe mark that overlaps the wiring region is at most 30% of an entire area of the wiring region in a plan view of the silicon carbide semiconductor device.