Temperature detection circuit

A temperature detection circuit (1) includes a first transistor (Q1) of a bipolar type, and a second transistor (Q2) of a bipolar type, wherein the first transistor (Q1) and the second transistor (Q2) form a current mirror circuit (10), and the temperature of the amplifier circuit (30) is detected b...

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Bibliographische Detailangaben
Hauptverfasser: Kawano, Takayuki, Yamashiro, Hideyo, Suzuki, Nobukazu, Sugimoto, Yasutaka
Format: Patent
Sprache:eng
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Zusammenfassung:A temperature detection circuit (1) includes a first transistor (Q1) of a bipolar type, and a second transistor (Q2) of a bipolar type, wherein the first transistor (Q1) and the second transistor (Q2) form a current mirror circuit (10), and the temperature of the amplifier circuit (30) is detected based on a temperature change of the first transistor (Q1) and the second transistor (Q2).