Semiconductor device including one or more p-type semiconductors provided between an n-type semiconductor layer and an electrode

Semiconductor device including one or more p-type semiconductors provided between an n-type semiconductor layer and an electrode

A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; one or more p-type semiconductors; an electrode, the one or more p-type semiconductors that are provided between the n-type semicondu...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Amazutsumi, Koji, Takahashi, Isao, Sugimoto, Masahiro, Shinohe, Takashi
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; one or more p-type semiconductors; an electrode, the one or more p-type semiconductors that are provided between the n-type semiconductor layer and the electrode, and at least a part of the one or more p-type semiconductors is protruded in the electrode.