Integration of Si-based transistors with non-Si technologies by semiconductor regrowth over an insulator material

Integration of Si-based transistors with non-Si technologies by semiconductor regrowth over an insulator material

Disclosed herein are IC structures, packages, and devices that include Si-based semiconductor material stack monolithically integrated on the same support structure as non-Si transistors or other non-Si-based devices. In some aspects, the Si-based semiconductor material stack may be provided by semi...

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Bibliographische Detailangaben
Hauptverfasser: Then, Han Wui, Radosavljevic, Marko, Ramaswamy, Rahul, Fischer, Paul B, Dasgupta, Sansaptak, Rode, Johann Christian, Hafez, Walid M, Nidhi, Nidhi
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Disclosed herein are IC structures, packages, and devices that include Si-based semiconductor material stack monolithically integrated on the same support structure as non-Si transistors or other non-Si-based devices. In some aspects, the Si-based semiconductor material stack may be provided by semiconductor regrowth over an insulator material. Providing a Si-based semiconductor material stack monolithically integrated on the same support structure as non-Si based devices may provide a viable approach to integrating Si-based transistors with non-Si technologies because the Si-based semiconductor material stack may serve as a foundation for forming Si-based transistors.