Semiconductor device having contact trenches extending from opposite sides of a semiconductor body

Semiconductor device having contact trenches extending from opposite sides of a semiconductor body

A method of manufacturing a semiconductor body includes forming a pattern at a first side of a substrate, forming a semiconductor layer on the first side of the substrate, attaching the substrate and the semiconductor layer to a carrier via a surface of the semiconductor layer, and removing the subs...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Meiser, Andreas, Lang, Hans-Peter, Irsigler, Peter, Zundel, Markus, Meyer, Thorsten
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of manufacturing a semiconductor body includes forming a pattern at a first side of a substrate, forming a semiconductor layer on the first side of the substrate, attaching the substrate and the semiconductor layer to a carrier via a surface of the semiconductor layer, and removing the substrate from a second side opposite to the first side.