Magnetoresistive element with free-layer and method of manufacturing same

A giant magnetoresistance (GMR) element is provided for use in a magnetic multi-turn sensor in which the free layer, that is, the layer that changes its magnetization direction in response to an external magnetic field so as to provide a resistance change, is thick enough to provide good shape aniso...

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Bibliographische Detailangaben
Hauptverfasser:	Kubik, Jan, Schmitt, Jochen, Lage, Enno, Tarequzzaman, Md, Urs, Onur Necdet, O Dalaigh, Cian Padraic
Format:	Patent
Sprache:	eng
Schlagworte:	ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVEREDIN A SINGLE OTHER SUBCLASS BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES LAND VEHICLES FOR TRAVELLING OTHERWISE THAN ON RAILS MAGNETS MEASURING MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR MOTOR VEHICLES PERFORMING OPERATIONS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES TARIFF METERING APPARATUS TESTING TRAILERS TRANSFORMERS TRANSPORTING
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Beschreibung
Zusammenfassung:	A giant magnetoresistance (GMR) element is provided for use in a magnetic multi-turn sensor in which the free layer, that is, the layer that changes its magnetization direction in response to an external magnetic field so as to provide a resistance change, is thick enough to provide good shape anisotropy without exhibiting an AMR effect. To achieve this, at least a portion of the free layer comprises a plurality of layers of at least two different materials, specifically, a plurality of layers of at least a first material that is ferromagnetic and a plurality of layers of at least a second material that is known not to exhibit an AMR effect and that does not interfere with the GMR effect of the layers of ferromagnetic material.