Method of deposition

Method of deposition

A hydrogenated silicon carbon nitride (SiCN:H) film is deposited onto a substrate by plasma enhanced chemical vapour deposition (PECVD) comprising: providing the substrate in a chamber; introducing silane (SiH4), a carbon-donating precursor, and nitrogen gas (N2) into the chamber; and sustaining a p...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Crook, Kathrine, Harper, Tristan
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A hydrogenated silicon carbon nitride (SiCN:H) film is deposited onto a substrate by plasma enhanced chemical vapour deposition (PECVD) comprising: providing the substrate in a chamber; introducing silane (SiH4), a carbon-donating precursor, and nitrogen gas (N2) into the chamber; and sustaining a plasma in the chamber so as to deposit SiCN:H onto the substrate by PECVD, wherein the substrate is maintained at a temperature of less than about 250° C.