Composition for resist underlayer, and pattern forming method using same

Composition for resist underlayer, and pattern forming method using same

A resist underlayer composition and a method of forming patterns using the same is disclosed. The resist underlayer composition includes a polymer including a structure represented by Chemical Formula 1 at the terminal end and a structural unit represented by Chemical Formula 2 and a structural unit...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Kim, Minsoo, Park, Hyeon, Choi, Yoojeong, Baek, Jaeyeol, Bae, Shinhyo, Kwon, Soonhyung
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Beschreibung
Zusammenfassung:A resist underlayer composition and a method of forming patterns using the same is disclosed. The resist underlayer composition includes a polymer including a structure represented by Chemical Formula 1 at the terminal end and a structural unit represented by Chemical Formula 2 and a structural unit represented by Chemical Formula 3 in the main chain; and a solvent. Definitions of Chemical Formula 1 to Chemical Formula 3 are the same as described in the detailed description.