Magnetoresistance memory device
In general, according to one embodiment, a magnetoresistance memory device includes: a first ferromagnetic layer; an insulating layer above the first ferromagnetic layer; a second ferromagnetic layer above the insulating layer; a third ferromagnetic layer above the second ferromagnetic layer; and a...
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| creator | Jung, Jin Won Sawada, Kazuya Kwak, Jung Hyeok Kitagawa, Eiji Oikawa, Tadaaki Eeh, Young Min Isoda, Taiga |
| description | In general, according to one embodiment, a magnetoresistance memory device includes: a first ferromagnetic layer; an insulating layer above the first ferromagnetic layer; a second ferromagnetic layer above the insulating layer; a third ferromagnetic layer above the second ferromagnetic layer; and a fourth ferromagnetic layer above the third ferromagnetic layer. The third ferromagnetic layer includes an oxide of an alloy including iron. The fourth ferromagnetic layer includes iron and a 5d transition metal. |
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The third ferromagnetic layer includes an oxide of an alloy including iron. The fourth ferromagnetic layer includes iron and a 5d transition metal.</description><language>eng</language><subject>ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241022&DB=EPODOC&CC=US&NR=12125510B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241022&DB=EPODOC&CC=US&NR=12125510B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Jung, Jin Won</creatorcontrib><creatorcontrib>Sawada, Kazuya</creatorcontrib><creatorcontrib>Kwak, Jung Hyeok</creatorcontrib><creatorcontrib>Kitagawa, Eiji</creatorcontrib><creatorcontrib>Oikawa, Tadaaki</creatorcontrib><creatorcontrib>Eeh, Young Min</creatorcontrib><creatorcontrib>Isoda, Taiga</creatorcontrib><title>Magnetoresistance memory device</title><description>In general, according to one embodiment, a magnetoresistance memory device includes: a first ferromagnetic layer; an insulating layer above the first ferromagnetic layer; a second ferromagnetic layer above the insulating layer; a third ferromagnetic layer above the second ferromagnetic layer; and a fourth ferromagnetic layer above the third ferromagnetic layer. 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The third ferromagnetic layer includes an oxide of an alloy including iron. The fourth ferromagnetic layer includes iron and a 5d transition metal.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES |
| title | Magnetoresistance memory device |
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