Magnetoresistance memory device

In general, according to one embodiment, a magnetoresistance memory device includes: a first ferromagnetic layer; an insulating layer above the first ferromagnetic layer; a second ferromagnetic layer above the insulating layer; a third ferromagnetic layer above the second ferromagnetic layer; and a...

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Bibliographische Detailangaben
Hauptverfasser: Jung, Jin Won, Sawada, Kazuya, Kwak, Jung Hyeok, Kitagawa, Eiji, Oikawa, Tadaaki, Eeh, Young Min, Isoda, Taiga
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:In general, according to one embodiment, a magnetoresistance memory device includes: a first ferromagnetic layer; an insulating layer above the first ferromagnetic layer; a second ferromagnetic layer above the insulating layer; a third ferromagnetic layer above the second ferromagnetic layer; and a fourth ferromagnetic layer above the third ferromagnetic layer. The third ferromagnetic layer includes an oxide of an alloy including iron. The fourth ferromagnetic layer includes iron and a 5d transition metal.