Topological insulator based spin torque oscillator reader

The present disclosure generally relates to a bismuth antimony (BiSb) based STO (spin torque oscillator) sensor. The STO sensor comprises a SOT device and a magnetic tunnel junction (MTJ) structure. By utilizing a BiSb layer within the SOT device, a larger spin Hall angle (SHA) can be achieved, ther...

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Bibliographische Detailangaben
Hauptverfasser:	Li, Zhanjie, Ho, Kuok San, Liu, Xiaoyong, York, Brian R, Takano, Hisashi, Le, Quang, Hwang, Cherngye
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER PHYSICS
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Beschreibung
Zusammenfassung:	The present disclosure generally relates to a bismuth antimony (BiSb) based STO (spin torque oscillator) sensor. The STO sensor comprises a SOT device and a magnetic tunnel junction (MTJ) structure. By utilizing a BiSb layer within the SOT device, a larger spin Hall angle (SHA) can be achieved, thereby improving the efficiency and reliability of the STO sensor.