Parameter adjustment model for semiconductor processing chambers

A system may include a first semiconductor processing station configured to deposit a material on a first semiconductor wafer, a second semiconductor processing station configured perform measurements indicative of a thickness of the material after the material has been deposited on the first semico...

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Bibliographische Detailangaben
Hauptverfasser:	Klocke, John L, McClure, Adam Marc, McHugh, Paul R, Wilson, Gregory J, Bergman, Eric J
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS THEREFOR CHEMISTRY CONTROL OR REGULATING SYSTEMS IN GENERAL CONTROLLING ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FUNCTIONAL ELEMENTS OF SUCH SYSTEMS METALLURGY MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS PHYSICS PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS REGULATING
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Beschreibung
Zusammenfassung:	A system may include a first semiconductor processing station configured to deposit a material on a first semiconductor wafer, a second semiconductor processing station configured perform measurements indicative of a thickness of the material after the material has been deposited on the first semiconductor wafer, and a controller. The controller may be configured to receive the measurements from the second station; provide an input based on the measurements to a trained model that is configured to generate an output that adjusts an operating parameter of the first station such that the thickness of the material is closer to a target thickness; and causing the first station to deposit the material on a second wafer using the operating parameter as adjusted by the output.