Packed terminal transistors

A die includes fins extending in a first direction, a gate formed over the fins, the gate extending in a second direction that is perpendicular to the first direction, a first source/drain contact layer formed over the fins and extending in the second direction, and a second source/drain contact lay...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Williams, Thomas Hua-Min, Park, Jeongah, Siddaiah, Harini, Thomas, Rinoj, Kumar, Raj, Shaik, Khaja Ahmad
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A die includes fins extending in a first direction, a gate formed over the fins, the gate extending in a second direction that is perpendicular to the first direction, a first source/drain contact layer formed over the fins and extending in the second direction, and a second source/drain contact layer formed over the fins and extending in the second direction, wherein the first source/drain contact layer and the second source/drain contact layer are on opposite sides of the gate. The die also includes a first source/drain metal layer electrically coupled to the first source/drain contact layer, and a second source/drain metal layer electrically coupled to the second source/drain contact layer, wherein the first source/drain metal layer and the second source/drain metal layer do not overlap one or more of the fins.