Semiconductor structure with different crystalline orientations

A semiconductor structure comprises a semiconductor substrate including a first silicon substrate component having a first crystalline orientation and a second silicon substrate component over the first silicon substrate and having a second crystalline orientation different from the first crystallin...

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Bibliographische Detailangaben
Hauptverfasser: Leobandung, Effendi, Chen, Tze-Chiang
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor structure comprises a semiconductor substrate including a first silicon substrate component having a first crystalline orientation and a second silicon substrate component over the first silicon substrate and having a second crystalline orientation different from the first crystalline orientation. The semiconductor substrate defines a trench extending through the second silicon substrate component and at least partially within the first silicon substrate component. A gallium nitride structure is disposed within the trench of the semiconductor substrate.