Method for producing semiconductor element and chemical solution to be used in method for producing semiconductor element

A method for producing a semiconductor element and a chemical solution to be used in the method for producing a semiconductor element, the method including dry-etching or chemically-mechanically polishing a ruthenium-containing layer located as an uppermost layer of a substrate; and bringing a surfa...

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Bibliographische Detailangaben
Hauptverfasser:	Takahashi, Kazuhiro, Wada, Yukihisa
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for producing a semiconductor element and a chemical solution to be used in the method for producing a semiconductor element, the method including dry-etching or chemically-mechanically polishing a ruthenium-containing layer located as an uppermost layer of a substrate; and bringing a surface of the substrate into contact with a chemical solution thereby satisfactorily cleaning and removing a ruthenium residue formed on the surface of the substrate; and a chemical solution to be suitably used in the method for producing a semiconductor element.