Method of making high critical temperature metal nitride layer

Method of making high critical temperature metal nitride layer

A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal...

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Bibliographische Detailangaben
Hauptverfasser: Zhu, Mingwei, Chen, Zhebo, Patibandla, Nag B, Yang, Zihao, Cao, Yong, Chowdhury, Mohammad Kamruzzaman, Lavan, Shane, Mangipudi, Shriram
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.