Ruthenium-based liner for a copper interconnect

In some implementations, one or more semiconductor processing tools may form a via within a substrate of a semiconductor device. The one or more semiconductor processing tools may deposit a ruthenium-based liner within the via. The one or more semiconductor processing tools may deposit, after deposi...

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Bibliographische Detailangaben
Hauptverfasser: Chiang, Ming-Chou, Kuo, Kai-Shiang, Lin, Chun-Chieh, Su, Hung-Wen, Liu, Yao-Min, Chin, Shu-Cheng, Gao, Ming-Yuan, Hsieh, Huei-Wen, Lin, Yen-Chun, Weng, Cheng-Hui
Format: Patent
Sprache:eng
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Zusammenfassung:In some implementations, one or more semiconductor processing tools may form a via within a substrate of a semiconductor device. The one or more semiconductor processing tools may deposit a ruthenium-based liner within the via. The one or more semiconductor processing tools may deposit, after depositing the ruthenium-based liner, a copper plug within the via.