Method of processing substrate, substrate processing apparatus, recording medium, and method of manufacturing semiconductor device
There is provided a technique that includes: forming a film containing a main element, carbon and nitrogen on a pattern formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer containing th...
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Zusammenfassung: | There is provided a technique that includes: forming a film containing a main element, carbon and nitrogen on a pattern formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer containing the main element by supplying a precursor, which contains the main element constituting the film to be formed, to the substrate having the pattern; and (b) forming a second layer containing the main element, carbon and nitrogen by supplying a first reactant, which contains carbon and nitrogen, to the substrate so that a substance obtained by decomposing a portion of the first reactant is adsorbed on the first layer. |
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