Metal complexes for gas-phase thin-film deposition

Metal complexes of formula (I) are described:[M(L1)x(L2)y(hydra)z]n formula (I)wherein:M=metal atom having an atomic number selected from the ranges a) through c):a) 12, 21 to 34, with the exception of 30,b) 39 to 52, with the exception of 48,c) 71 to 83, with the exception of 80,L1=neutral or anio...

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Bibliographische Detailangaben
Hauptverfasser:	Schumann, Henrik, Schorn, Wolf, Woerner, Eileen, Sundermeyer, Joerg, Karch, Ralf, Doppiu, Angelino, Rau, Nicholas, Frey, Annika
Format:	Patent
Sprache:	eng
Schlagworte:	ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Metal complexes of formula (I) are described:[M(L1)x(L2)y(hydra)z]n formula (I)wherein:M=metal atom having an atomic number selected from the ranges a) through c):a) 12, 21 to 34, with the exception of 30,b) 39 to 52, with the exception of 48,c) 71 to 83, with the exception of 80,L1=neutral or anionic ligand, with x=0 or 1,L2=neutral or anionic ligand, with y=0 or 1,(hydra)=acetone dimethylhydrazone monoanion, with z=1, 2, or 3,n=1 or 2, andthe total charge of the complex is 0.