Group III nitride device and method of fabricating a Group III nitride-based device

In an embodiment, a Group III nitride-based transistor device includes a first passivation layer arranged on a first major surface of a Group III nitride-based layer, a second passivation layer arranged on the first passivation layer, a source ohmic contact, a drain ohmic contact and a gate position...

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Bibliographische Detailangaben

Hauptverfasser:	Twynam, John, Birner, Albert, Brech, Helmut
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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