Group III nitride device and method of fabricating a Group III nitride-based device

Group III nitride device and method of fabricating a Group III nitride-based device

In an embodiment, a Group III nitride-based transistor device includes a first passivation layer arranged on a first major surface of a Group III nitride-based layer, a second passivation layer arranged on the first passivation layer, a source ohmic contact, a drain ohmic contact and a gate position...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Twynam, John, Birner, Albert, Brech, Helmut
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In an embodiment, a Group III nitride-based transistor device includes a first passivation layer arranged on a first major surface of a Group III nitride-based layer, a second passivation layer arranged on the first passivation layer, a source ohmic contact, a drain ohmic contact and a gate positioned on the first major surface of a Group III nitride-based layer, and a field plate, the field plate being laterally arranged between and spaced apart from the gate and the drain ohmic contact.