Laser diode chip
A laser diode chip is described, comprising including:an n-type semiconductor region, a p-type semiconductor region, and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region, an n-type contact and a p-type contact,at least one heating element arranged...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A laser diode chip is described, comprising including:an n-type semiconductor region, a p-type semiconductor region, and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region, an n-type contact and a p-type contact,at least one heating element arranged on a side of the laser diode chip facing the p-type semiconductor region, the heating element functioning as a resistance heater, andat least one metallic seed layer, wherein the heating element comprises a part of the seed layer, and wherein the p-type contact is arranged on a further part of the seed layer. |
|---|