Polishing pad with improved crosslinking density and process for preparing the same

The present invention provides a polishing pad whose crosslinking density is adjusted to enhance the performance of the CMP process such as polishing rate and cut pad rate. In addition, in the process for preparing a polishing pad according to the embodiment, it is possible to implement such a cross...

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Bibliographische Detailangaben
Hauptverfasser:	Heo, Hye Young, Yun, Jong Wook, Seo, Jang Won, Joeng, Eun Sun
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GENERAL PROCESSES OF COMPOUNDING GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP TOOLS FOR GRINDING, BUFFING, OR SHARPENING TRANSPORTING WORKING-UP
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Beschreibung
Zusammenfassung:	The present invention provides a polishing pad whose crosslinking density is adjusted to enhance the performance of the CMP process such as polishing rate and cut pad rate. In addition, in the process for preparing a polishing pad according to the embodiment, it is possible to implement such a crosslinking density by a simple method of controlling the preheating temperature of the mold for curing. Thus, the polishing pad may be applied to a process of preparing a semiconductor device, which comprises a CMP process, to provide a semiconductor device such as a wafer of excellent quality.