Semiconductor device with a field plate extending from drain

Semiconductor device with a field plate extending from drain

Some embodiments of the present disclosure provide a semiconductor device including a channel layer, a barrier layer, a p-type doped III-V layer, a gate, a drain, and a doped semiconductor layer. The barrier layer is disposed on the channel layer. The p-type doped III-V layer is disposed on the barr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Wong, King Yuen, Hao, Ronghui Denys
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Some embodiments of the present disclosure provide a semiconductor device including a channel layer, a barrier layer, a p-type doped III-V layer, a gate, a drain, and a doped semiconductor layer. The barrier layer is disposed on the channel layer. The p-type doped III-V layer is disposed on the barrier layer. The gate is disposed on the p-type doped III-V layer. The drain is disposed on the barrier layer. The doped semiconductor layer is disposed on the barrier layer and is covered by the drain. The drain has a first portion located between the p-type doped III-V layer and an entirety of the doped semiconductor layer.