Scandium nitride magnetic tunnel junction device
A magnetic tunnel junction device is disclosed comprising a first device layer comprising a material having a magnetic moment; a second device layer comprising a material having a magnetic moment, e.g., wherein the magnetic moment of the material of the second device layer is different from that of...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A magnetic tunnel junction device is disclosed comprising a first device layer comprising a material having a magnetic moment; a second device layer comprising a material having a magnetic moment, e.g., wherein the magnetic moment of the material of the second device layer is different from that of the material of the first device layer; and a barrier layer, e.g., tunnel barrier, having a first interface to the first device layer comprising predominantly of a scandium nitride (ScN) material and having a second interface to the second device layer comprising predominantly of a scandium nitride (ScN) material. |
|---|