Thin-film crystalline structure with surfaces having selected plane orientations

A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a first thickness T1; and ion beam milling the layer of the template material to remove thickness T2, where T2

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Zhao, Tong, Wan, Li, Kautzky, Michael Christopher
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Zhao, Tong
Wan, Li
Kautzky, Michael Christopher
description A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a first thickness T1; and ion beam milling the layer of the template material to remove thickness T2, where T2
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US12057147B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US12057147B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US12057147B23</originalsourceid><addsrcrecordid>eNqNzLEKwjAQgOEsDqK-w_kABVuV7oriKFjnEuK1OTiTkLsovr0dfACnf_n45-baeQrVQPwElz-ilpkCgmguTktGeJN6kJIH61DA2xeFEQQZneIDEttJx0wY1CrFIEszGywLrn5dmPX51B0vFabYo6RpE1D7-61uNvu23rWHZvuP-QIUgjhx</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Thin-film crystalline structure with surfaces having selected plane orientations</title><source>esp@cenet</source><creator>Zhao, Tong ; Wan, Li ; Kautzky, Michael Christopher</creator><creatorcontrib>Zhao, Tong ; Wan, Li ; Kautzky, Michael Christopher</creatorcontrib><description>A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a first thickness T1; and ion beam milling the layer of the template material to remove thickness T2, where T2&lt;T1, resulting in a layer of the template material with thickness T1−T2. The ion beam milling is performed at a channeling angle relative to a deposition plane of the wafer, the channeling angle defined relative to a channeling direction of a crystalline microstructure of the template material. After the repetitions, additional material is deposited on the template to form a final structure. The additional material has a same crystalline microstructure as the template material.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INDUCTANCES ; INFORMATION STORAGE ; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER ; MAGNETS ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MANUFACTURE OR TREATMENT THEREOF ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; MICROSTRUCTURAL TECHNOLOGY ; NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS ; NANOTECHNOLOGY ; PERFORMING OPERATIONS ; PHYSICS ; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS ; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ; SEMICONDUCTOR DEVICES ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TRANSFORMERS ; TRANSPORTING</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240806&amp;DB=EPODOC&amp;CC=US&amp;NR=12057147B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240806&amp;DB=EPODOC&amp;CC=US&amp;NR=12057147B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Zhao, Tong</creatorcontrib><creatorcontrib>Wan, Li</creatorcontrib><creatorcontrib>Kautzky, Michael Christopher</creatorcontrib><title>Thin-film crystalline structure with surfaces having selected plane orientations</title><description>A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a first thickness T1; and ion beam milling the layer of the template material to remove thickness T2, where T2&lt;T1, resulting in a layer of the template material with thickness T1−T2. The ion beam milling is performed at a channeling angle relative to a deposition plane of the wafer, the channeling angle defined relative to a channeling direction of a crystalline microstructure of the template material. After the repetitions, additional material is deposited on the template to form a final structure. The additional material has a same crystalline microstructure as the template material.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INDUCTANCES</subject><subject>INFORMATION STORAGE</subject><subject>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</subject><subject>MAGNETS</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MANUFACTURE OR TREATMENT THEREOF</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>MICROSTRUCTURAL TECHNOLOGY</subject><subject>NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS</subject><subject>NANOTECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PHYSICS</subject><subject>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</subject><subject>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>TRANSFORMERS</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzLEKwjAQgOEsDqK-w_kABVuV7oriKFjnEuK1OTiTkLsovr0dfACnf_n45-baeQrVQPwElz-ilpkCgmguTktGeJN6kJIH61DA2xeFEQQZneIDEttJx0wY1CrFIEszGywLrn5dmPX51B0vFabYo6RpE1D7-61uNvu23rWHZvuP-QIUgjhx</recordid><startdate>20240806</startdate><enddate>20240806</enddate><creator>Zhao, Tong</creator><creator>Wan, Li</creator><creator>Kautzky, Michael Christopher</creator><scope>EVB</scope></search><sort><creationdate>20240806</creationdate><title>Thin-film crystalline structure with surfaces having selected plane orientations</title><author>Zhao, Tong ; Wan, Li ; Kautzky, Michael Christopher</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US12057147B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INDUCTANCES</topic><topic>INFORMATION STORAGE</topic><topic>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</topic><topic>MAGNETS</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MANUFACTURE OR TREATMENT THEREOF</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>MICROSTRUCTURAL TECHNOLOGY</topic><topic>NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS</topic><topic>NANOTECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PHYSICS</topic><topic>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</topic><topic>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>TRANSFORMERS</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Zhao, Tong</creatorcontrib><creatorcontrib>Wan, Li</creatorcontrib><creatorcontrib>Kautzky, Michael Christopher</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhao, Tong</au><au>Wan, Li</au><au>Kautzky, Michael Christopher</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Thin-film crystalline structure with surfaces having selected plane orientations</title><date>2024-08-06</date><risdate>2024</risdate><abstract>A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a first thickness T1; and ion beam milling the layer of the template material to remove thickness T2, where T2&lt;T1, resulting in a layer of the template material with thickness T1−T2. The ion beam milling is performed at a channeling angle relative to a deposition plane of the wafer, the channeling angle defined relative to a channeling direction of a crystalline microstructure of the template material. After the repetitions, additional material is deposited on the template to form a final structure. The additional material has a same crystalline microstructure as the template material.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US12057147B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
MAGNETS
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MANUFACTURE OR TREATMENT THEREOF
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
MICROSTRUCTURAL TECHNOLOGY
NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS
NANOTECHNOLOGY
PERFORMING OPERATIONS
PHYSICS
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
SEMICONDUCTOR DEVICES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSFORMERS
TRANSPORTING
title Thin-film crystalline structure with surfaces having selected plane orientations
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T05%3A41%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Zhao,%20Tong&rft.date=2024-08-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS12057147B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true