Thin-film crystalline structure with surfaces having selected plane orientations

A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a first thickness T1; and ion beam milling the layer of the template material to remove thickness T2, where T2

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Bibliographische Detailangaben
Hauptverfasser:	Zhao, Tong, Wan, Li, Kautzky, Michael Christopher
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDUCTANCES INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER MAGNETS MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MANUFACTURE OR TREATMENT THEREOF MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES MICROSTRUCTURAL TECHNOLOGY NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSFORMERS TRANSPORTING
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Beschreibung
Zusammenfassung:	A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a first thickness T1; and ion beam milling the layer of the template material to remove thickness T2, where T2