Integrated circuit devices including stacked gate structures with different dimensions

Integrated circuit devices may include a lower transistor and an upper transistor stacked on a substrate, and the upper transistor may overlap the lower transistor. The upper transistor may include an upper gate structure, and the lower transistor may include a lower gate structure, and the upper ga...

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Bibliographische Detailangaben
Hauptverfasser: Hong, Byounghak, Song, Seunghyun
Format: Patent
Sprache:eng
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Zusammenfassung:Integrated circuit devices may include a lower transistor and an upper transistor stacked on a substrate, and the upper transistor may overlap the lower transistor. The upper transistor may include an upper gate structure, and the lower transistor may include a lower gate structure, and the upper gate structure and the lower gate structure may have different widths in a horizontal direction.