Semiconductor devices and methods of manufacturing thereof
A semiconductor device comprising a semiconductor channel, an epitaxial structure coupled to the semiconductor channel, and a gate structure electrically coupled to the semiconductor channel. The semiconductor device further comprises a first interconnect structure electrically coupled to the epitax...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor device comprising a semiconductor channel, an epitaxial structure coupled to the semiconductor channel, and a gate structure electrically coupled to the semiconductor channel. The semiconductor device further comprises a first interconnect structure electrically coupled to the epitaxial structure and a dielectric layer that contains nitrogen. The dielectric layer comprises a first portion protruding from a nitrogen-containing dielectric capping layer that overlays either the gate structure or the first interconnect structure. |
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