Logic cell layout design for high density transistors

The present disclosure relates to semiconductor structures and, more particularly, to a logic cell layout design for high density transistors and methods of manufacture. The structure includes a plurality of active gates in a high density transistor, and at least one dummy gate which is continuous a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Ichihashi, Motoi, Zhu, Xuelian, Strehlow, Elizabeth, Mazza, James P, Zeng, Jia
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present disclosure relates to semiconductor structures and, more particularly, to a logic cell layout design for high density transistors and methods of manufacture. The structure includes a plurality of active gates in a high density transistor, and at least one dummy gate which is continuous and is adjacent to at least one active gate of the active gates in a multi-row cell of the high density transistor.